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| TIP120 ... TIP122 TIP120 ... TIP122 NPN Version 2006-10-17 100.2 3 4 3.8 Type Typ Si-Epitaxial Planar Darlington Power Transistors Si-Epitaxial Planar Darlington-Leistungs-Transistoren Max. power dissipation with cooling Max. Verlustleistung mit Kuhlung Collector current Kollektorstrom Plastic case Kunststoffgehause Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen NPN 65 W 5A TO-220AB 2.2 g 15.7 123 13.2 1.5 0.9 2.54 Dimensions - Mae [mm] 1=B 2/4 = C 3=E Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spg. Collector-Base-voltage - Kollektor-Basis-Spg. Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung without cooling - ohne Kuhlung with cooling - mit Kuhlung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Base current - Basisstrom (dc) Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur TA = 25C TC = 25C Ptot Ptot IC ICM IB Tj TS B open E open C open VCEO VCBO VEBO 60 V 60 V 3.4 Grenzwerte (TA = 25C) TIP120 TIP121 80 V 80 V 5V 2 W 1) 65 W 5A 8A 120 mA -55...+150C -55...+150C TIP122 100 V 100 V Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis ) 2 Kennwerte (Tj = 25C) Typ. - - Max. - - IC = 0.5 A, VCE = 3 V IC = 3 A, VCE = 3 V Small signal current gain - Kleinsignal-Stromverstarkung IC = 3 A, VCE = 4 V, f = 1 MHz hFE hFE hfe 1000 1000 4 1 2 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gultig wenn die Anschlussdrahte in 5 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 TIP120 ... TIP122 Characteristics (Tj = 25C) Min. Collector-Emitter saturation volt. - Kollektor-Emitter-Sattigungsspg. 2) IC = 3 A, IB = 12 mA IC = 5 A, IB = 20 mA Base-Emitter voltage - Basis-Emitter-Spannung 2) IC = 3 A, VCE = 3 V Collector-Emitter cutoff current - Kollektor-Emitter-Reststrom VCE = 30 V, (B open) VCE = 40 V, (B open) VCE = 50 V, (B open) VCB = 60 V, (E open) VCB = 80 V, (E open) VCB = 100 V, (E open) VCB = 10 V, IE = ie = 0, f = 100 kHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Thermal resistance junction to case Warmewiderstand Sperrschicht - Gehause Admissible torque for mounting Zulassiges Anzugsdrehmoment Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Equivalent Circuit - Ersatzschaltbild T 1 T 2 Kennwerte (Tj = 25C) Typ. - - - - - - - - - - < 63 K/W 1) < 3 K/W 9 10% lb.in. 1 10% Nm TIP125 ... TIP127 C2 Max. 2V 4V 2.5 V 500 nA 500 nA 500 nA 200 nA 200 nA 200 nA 200 pF VCEsat VCEsat VBE TIP120 TIP121 TIP122 TIP120 TIP121 TIP122 ICEO ICEO ICEO ICBO ICBO ICBO CCB0 RthA RthC M4 - - - - - - - - - - Collector-Base cutoff current - Kollektor-Basis-Reststrom Collector-Base Capacitance - Kollektor-Basis-Kapazitat E B C B1 T1 T2 E2 2 1 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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